型号 功能描述 生产厂家 企业 LOGO 操作
K6R4008C1D

512Kx8 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

K6R4008C1D

1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

文件:218.74 Kbytes Page:9 Pages

Samsung

三星

K6R4008C1D

512Kx8 Bit High Speed Static RAM(5.0V Operating)

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:245.22 Kbytes Page:10 Pages

Samsung

三星

1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

文件:218.74 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

文件:134.63 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

文件:134.63 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

文件:134.63 Kbytes Page:9 Pages

Samsung

三星

K6R4008C1D产品属性

  • 类型

    描述

  • 型号

    K6R4008C1D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

更新时间:2025-11-22 14:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
11+
TSOP44
737
原装现货
SAMSUNG
2430+
TSOP44
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG/三星
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
25+23+
TSSOP
39679
绝对原装正品全新进口深圳现货
SAMSUNG/三星
20+
SOJ36
67500
原装优势主营型号-可开原型号增税票
SAMSUNG
22+
SOJ36
5000
全新原装现货!价格优惠!可长期
SAMSUNG
22+
SOJ
8000
原装正品支持实单
SAMSUNG
24+
SOJ36
26200
原装现货,诚信经营!
SAMSUNG
2016+
TSOP44
1980
只做原装,假一罚十,公司可开17%增值税发票!
SAMSUNG
11+
TSOP44
657
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