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K6R1008价格

参考价格：￥15.8907

型号：K6R1008C1D-TC10T00 品牌：Samsung 备注：这里有K6R1008多少钱，2025年最近7天走势，今日出价，今日竞价，K6R1008批发/采购报价，K6R1008行情走势销售排行榜，K6R1008报价。

型号	功能描述	生产厂家企业	LOGO
K6R1008C1D	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo	Samsung 三星	Samsung
K6R1008C1D-JC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-JC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-JI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-JI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-KC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-KC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-KI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-KI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-TC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-TC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-TI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-UC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-UC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-UI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008C1D-UI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-JI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-KI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI08SLASH10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-TI10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UC08	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UC08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UC08/10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UC10	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UC10	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung
K6R1008V1D-UI08	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate	Samsung 三星	Samsung

K6R1008产品属性

类型
描述
型号
K6R1008
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

K6R1008供应商更多...

更新时间：2025-12-29 11:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	K6R1008C1D-JC10	SAMSUNG	22+	SOJ	20000	公司只做原装品质保障	询价
深圳市宇创芯科技有限公司	K6R1008C1D-JC10	SAMSUNG/三星	24+	SOJ	9600	原装现货,优势供应,支持实单!	询价
深圳市纳艾斯科技有限公司	K6R1008C1D-JC10	SAMSUNG	24+	SOJ-32	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市坤融电子科技有限公司	K6R1008C1D-JC10	SAMSUNG/三星	2025+	SOJ	4950	原装进口价格优请找坤融电子!	询价
深圳市勤思达科技有限公司	K6R1008C1D-JC10	SAMSUNG	12+	SOP32	100000	全新原装,公司大量现货,绝对正品供应	询价
艾睿（深圳）半导体有限公司	K6R1008C1D-JC10	SAMSUNG/三星	2447	SOJ32	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	K6R1008C1D-JC10	SAMSUNG/三星	23+	SOJ	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	K6R1008C1D-JC10	SAMSUNG	23+	SOJ	8000	只做原装现货	询价
深圳市莱克讯科技有限公司	K6R1008C1D-JC10	SAMSUNG	1923+	SOJ32	2000	公司原装现货特价处理	询价
上海磐岳电子有限公司	K6R1008C1D-JC10	SAMSUNG	2023+	SOJ	5800	进口原装,现货热卖	询价

K6R1008芯片相关品牌

K6R1008规格书下载地址

K6R1008参数引脚图相关

K6R1008数据表相关新闻

K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26
K5-1658UN-01
商品目录行程开关电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28
K6R4016C1D-UI10 静态存储器芯片进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1
K521F13ACA-B060
K521F13ACA-B060
2019-11-4

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K6R1008价格

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K6R1008芯片相关品牌

K6R1008规格书下载地址

K6R1008参数引脚图相关

K6R1008数据表相关新闻

K521H12ACH-B050

K5-1658UN-01

K6R4016C1D-UI10 静态存储器芯片 进口原装现货。

K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，

K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC

K521F13ACA-B060

DdatasheetPDF页码索引

K6R4016C1D-UI10 静态存储器芯片进口原装现货。