位置：首页 > IC中文资料第6518页 > K6F2016U4G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F2016U4G | 2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 |  |   |
2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
2Mb(128Kx16bit)LowPowerSRAM 文件：160.59 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
128Kx16bitSuperLowPowerandLowVoltageFullCMOSStaticRAM GENERALDESCRIPTION TheK6F2016U4EfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryb | SamsungSamsung Group 三星三星半导体 | | | |
128Kx16bitSuperLowPowerandLowVoltageFullCMOSStaticRAM GENERALDESCRIPTION TheK6F2016U4EfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryb | SamsungSamsung Group 三星三星半导体 | | | |
128Kx16bitSuperLowPowerandLowVoltageFullCMOSStaticRAM 文件：117.7 Kbytes Page：9 Pages | SamsungSamsung Group 三星三星半导体 | | | |
128Kx16bitSuperLowPowerandLowVoltageFullCMOSStaticRAM 文件：117.7 Kbytes Page：9 Pages | SamsungSamsung Group 三星三星半导体 | | | |
128Kx16bitSuperLowPowerandLowVoltageFullCMOSStaticRAM GENERALDESCRIPTION TheK6F2016U4EfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryb | SamsungSamsung Group 三星三星半导体 | | |
K6F2016U4G产品属性
- 类型
描述
- 型号
K6F2016U4G
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
2Mb(128K x 16 bit) Low Power SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
23+ |
BGA |
20000 |
全新原装假一赔十 |
|||
SAMSUNG |
23+ |
标准封装 |
18000 |
||||
SAMSUNG |
2016+ |
FBGA |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
SAM |
21+ |
BGA |
1709 |
||||
SAMSUNG |
23+ |
NA |
3118 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
20+ |
BGA |
9860 |
原装现货/放心购买 |
||||
SAMSUNG |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
SANSUNG |
2020+ |
BGA |
35000 |
100%进口原装正品公司现货库存 |
|||
SAM |
23+ |
BGA |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
SAM |
23+ |
BGA |
65480 |
K6F2016U4G芯片相关品牌
K6F2016U4G规格书下载地址
K6F2016U4G参数引脚图相关
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K6F2016U4G数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050HYNIX2020+BGA K524G2GACJ-B050SKHYNIX2020+BGA K521F57ACM-A060HYNIX2020+BGA K524F2HACA-B050SKHYNIX2020+BGA K521H12ACB-B060HYNIX2020+BGA K524G2GACI-BO50HYNIX2020+BGA K521F57ACC-B050000HYNIX2020+BGA PM8018HYNIX2020BGA PM8015SKHYNIX2020BGA EMMC08G-W325S
2021-5-26K5-1658UN-01
商品目录行程开关 电路结构SPST-NO 作用力20gf 额定电压DC12V(DC) 额定电流50mA(DC) 开关功能Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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