位置：首页 > IC中文资料第6518页 > K6F2016U4G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F2016U4G | 2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 |   | |
K6F2016U4G | 2Mb(128K x 16 bit) Low Power SRAM | Samsung 三星 | | |
2Mb(128K x 16 bit) Low Power SRAM | Samsung 三星 | | ||
2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 | | ||
2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 | | ||
2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 | | ||
2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 | | ||
2Mb(128K x 16 bit) Low Power SRAM 文件：160.59 Kbytes Page：10 Pages | Samsung 三星 | | ||
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | | ||
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | | ||
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：117.7 Kbytes Page：9 Pages | Samsung 三星 | | ||
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：117.7 Kbytes Page：9 Pages | Samsung 三星 | | ||
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | |
K6F2016U4G产品属性
- 类型
描述
- 型号
K6F2016U4G
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
2Mb(128K x 16 bit) Low Power SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAM |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG/三星 |
23+ |
FBGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG/三星 |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
22+ |
TSOP |
5000 |
全新原装现货!自家库存! |
|||
SAM |
2023+ |
BGA |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
24+ |
BGA |
9860 |
原装现货/放心购买 |
||||
SAM |
22+ |
BGA |
3000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
SAMSUNG/三星 |
25+ |
FBGA |
996880 |
只做原装,欢迎来电资询 |
K6F2016U4G规格书下载地址
K6F2016U4G参数引脚图相关
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K6F2016U4G数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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