型号 功能描述 生产厂家 企业 LOGO 操作

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

K4X56163PI产品属性

  • 类型

    描述

  • 型号

    K4X56163PI

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16Mx16 Mobile DDR SDRAM

更新时间:2026-1-5 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEC
2016+
FBGA
9000
只做原装,假一罚十,公司可开17%增值税发票!
SEC
24+
FBGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUN
1046+
(BGA)
222
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
20+
BGA
19570
原装优势主营型号-可开原型号增税票
SAMSUNG/三星
24+
BGA
30000
房间原装现货特价热卖,有单详谈
SAMSUNG
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG/三星
25+
BGA
25000
代理原装现货,假一赔十
SAMSUNG/三星
25+
BGA
880000
明嘉莱只做原装正品现货
SAMSUNG
26+
SOT-23
86720
全新原装正品价格最实惠 假一赔百
SAMSUNG/三星
21+
BGA
10000
原装现货假一罚十

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