位置:K4X56163PG > K4X56163PG详情

K4X56163PG中文资料

厂家型号

K4X56163PG

文件大小

217.6Kbytes

页面数量

23

功能描述

16M x16 Mobile-DDR SDRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K4X56163PG数据手册规格书PDF详情

FEATURES

• 1.8V power supply, 1.8V I/O power

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• Deep Power Down Mode

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• LDM/UDM for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

K4X56163PG产品属性

  • 类型

    描述

  • 型号

    K4X56163PG

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16M x16 Mobile-DDR SDRAM

更新时间:2025-12-4 18:08:00
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SAMSUNG
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