型号 功能描述 生产厂家 企业 LOGO 操作
K4T51163QE

512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply

SAMSUNG

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

SAMSUNG

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

SAMSUNG

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

SAMSUNG

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

SAMSUNG

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

SAMSUNG

三星

K4T51163QE产品属性

  • 类型

    描述

  • 型号

    K4T51163QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb E-die DDR2 SDRAM Specification

更新时间:2026-3-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG/三星
2026+
BGA
65248
百分百原装现货 实单必成
SAMSUNG/三星
25+
NA
880000
明嘉莱只做原装正品现货
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAM
25+
BGA
3000
全新原装、诚信经营、公司现货销售
SAMSUNG
25+
73
公司优势库存 热卖中!
NOV
08+
No
222
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
2450+
BGA
9850
只做原厂原装正品现货或订货假一赔十!
HYNIX原厂
25+
BGA
210
原装现货只做自己现货

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