型号 功能描述 生产厂家 企业 LOGO 操作
K4T51163QE

512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

K4T51163QE产品属性

  • 类型

    描述

  • 型号

    K4T51163QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb E-die DDR2 SDRAM Specification

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
4370
原装现货,当天可交货,原型号开票
SAMSUNG
2016+
BGA
2500
只做原装,假一罚十,公司可开17%增值税发票!
SAMSUNG/三星
25+
BGA
65248
百分百原装现货 实单必成
SAMSUNG
0907+
BGA
6330
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
23+
FBGA84
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SAMSUNG
存储器
BGA
40372
SAMSUNG存储芯片K4T51163QE-ZCF7即刻询购立享优惠#长期有货
SAMSUNG/三星
25+
NA
880000
明嘉莱只做原装正品现货
SAMSUNG/三星
22+
FBGA-84
8000
原装正品支持实单
BGA
2450+
SAMSUNG
6540
原装现货或订发货1-2周

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