位置：首页 > IC中文资料第5985页 > K4T51163QB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4T51163QB | 512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 |  |   |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | | |
K4T51163QB产品属性
- 类型
描述
- 型号
K4T51163QB
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb B-die DDR2 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAM |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
SAMSUNG/三星 |
22+ |
BGA |
16800 |
全新进口原装现货,假一罚十 |
|||
SAMSUNG/三星 |
23+ |
BGA |
2331 |
全新原装现货特价/假一罚十 |
|||
BGA |
41 |
||||||
SAM |
23+ |
BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAMSUNG/三星 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG |
1923+ |
BGA84 |
2000 |
公司原装现货特价处理 |
|||
SAMSUNG |
23+ |
BGA |
8000 |
只做原装现货 |
|||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMS |
6000 |
面议 |
19 |
DIP/SMD |
K4T51163QB芯片相关品牌
K4T51163QB规格书下载地址
K4T51163QB参数引脚图相关
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- K4T51163QC-ZLE7
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- K4T51163QC-ZCCC
- K4T51163QB-ZCD5
- K4T51163QB-ZCCC
- K4T51163QB-GCD5
- K4T51163QB-GCCC
- K4T51083QJ-BCE7TCV
- K4T51083QJ-BCE7000
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- K4T51083QJ-BCE6000
- K4T51083QI
- K4T51083QG-HCLF7
- K4T51083QG-HCLE7
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- K4T51083QG-HCE6T00
- K4T51083QG
- K4T51083QE-ZCD5000
- K4T51083QE-ZCD5
- K4T51083QE
- K4T51083QC-ZLE7
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- K4T51083QC-ZLD5
- K4T51083QC-ZLCC
- K4T51083QC-ZCLE6
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- K4N25
K4T51163QB数据表相关新闻
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瀚佳科技专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-7
DdatasheetPDF页码索引
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