位置：首页 > IC中文资料第5583页 > K4T51163QC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 |  |   | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | |
K4T51163QC产品属性
- 类型
描述
- 型号
K4T51163QC
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb C-die DDR2 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
6000 |
面议 |
19 |
DIP/SMD |
|||
SAMSUNG/三星 |
19+ |
BGA |
10825 |
进口原装现货 |
|||
SAMSUNG |
23+ |
FBGA |
3700 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
SAMSUNG(三星) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
SANSUNG |
21+ |
84FBGA |
35200 |
一级代理/放心采购 |
|||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
SAMSUNG |
2021+ |
BGA |
6001 |
百分百原装正品 |
|||
SAMSUM |
23+ |
QFP |
980 |
全新原装,真实库存 |
|||
SAMSUNG |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
NOV |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
K4T51163QC芯片相关品牌
K4T51163QC规格书下载地址
K4T51163QC参数引脚图相关
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- K4T51163QG-HCE6000
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- K4T51163QC-ZCCC
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- K4T51083QE-ZCD5000
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K4T51163QC数据表相关新闻
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瀚佳科技专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-7
DdatasheetPDF页码索引
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