4M x 4Bit x 4 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S640432E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640432D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

4M x 4Bit x 4 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S640432E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

4M x 4Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640432F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro