型号 功能描述 生产厂家 企业 LOGO 操作

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

Samsung

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256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

Samsung

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256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

Samsung

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256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

Samsung

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256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

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256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

Samsung

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SDRAM Product Guide

文件:153.79 Kbytes Page:8 Pages

Samsung

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K4S560832J-UC产品属性

  • 类型

    描述

  • 型号

    K4S560832J-UC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Mb J-die SDRAM Specification

更新时间:2025-12-30 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
25+
BGA
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
SAMSUNG/三星
0934+
TSOP54
880000
明嘉莱只做原装正品现货
SAMSUNG
25+
3
公司优势库存 热卖中!
SAMSUNG
23+24
TSOP54
53870
原装正品,原盘原标,提供BOM一站式配单
SAMSUNG
23+
TSOP54
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
SAMSUNG/三星
22+
TSOP
12245
现货,原厂原装假一罚十!
SAMSUNG/三星
24+
TSOP
60000
SAMSUNG
23+
TSOP
50000
全新原装正品现货,支持订货
SAMSUNG/三星
24+
TSOP-54
9600
原装现货,优势供应,支持实单!
SAMSUNG
2023+
SMD
1082
安罗世纪电子只做原装正品货

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