256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

8M x 8bit x 4 Banks Synchronous DRAM LVTTL

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

SDRAM Product Guide

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