K4S560832A-TC/L1H中文资料下载全球贸易商三星-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第6580页 > K4S56

K4S56价格

参考价格：￥0.0000

型号：K4S560432B-TC1H 品牌：Samsung Semi 备注：这里有K4S56多少钱，2025年最近7天走势，今日出价，今日竞价，K4S56批发/采购报价，K4S56行情走势销售排行榜，K4S56报价。

型号	功能描述	生产厂家企业	LOGO
K4S560432A	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TC/L1H	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TC/L1L	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TC/L75	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TC/L80	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TCSLASHL1H	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TCSLASHL1L	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TCSLASHL75	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432A-TCSLASHL80	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TC/L1H	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TC/L1L	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TC/L75	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TCSLASHL1H	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TCSLASHL1L	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432B-TCSLASHL75	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p	Samsung 三星	Samsung
K4S560432E-NC	256Mb E-die SDRAM Specification 54pin sTSOP-II GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the	Samsung 三星	Samsung
K4S560432E-NC75	256Mb E-die SDRAM Specification 54pin sTSOP-II GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the	Samsung 三星	Samsung
K4S560432E-NL75	256Mb E-die SDRAM Specification 54pin sTSOP-II GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the	Samsung 三星	Samsung
K4S560432E-TC	256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432E-TC75	256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432E-TL75	256Mb E-die SDRAM Specification GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432J	256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432J	Consumer Memory SDRAM Product Guide Memory Division November 2007	Samsung 三星	Samsung
K4S560432J-UC/L75	256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432J-UCSLASHL75	256Mb J-die SDRAM Specification General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou	Samsung 三星	Samsung
K4S560432N	Consumer Memory SDRAM Product Guide Memory Division November 2007	Samsung 三星	Samsung
K4S560832A	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TC/L1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TC/L1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TC/L75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TC/L80	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TCSLASHL1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TCSLASHL1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TCSLASHL75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832A-TCSLASHL80	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TC/L1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TC/L1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TC/L75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TCSLASHL1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TCSLASHL1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832B-TCSLASHL75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po	Samsung 三星	Samsung
K4S560832C	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TC/L1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TC/L1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TC/L75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TC/L7C	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TCSLASHL1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TCSLASHL1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TCSLASHL75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832C-TCSLASHL7C	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D-TC/L1H	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D-TC/L1L	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D-TC/L75	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D-TC/L7C	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos	Samsung 三星	Samsung
K4S560832D-TC1H	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su	Samsung 三星	Samsung
K4S560832D-TC1L	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su	Samsung 三星	Samsung
K4S560832D-TC7A	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su	Samsung 三星	Samsung

K4S56产品属性

类型
描述
型号
K4S56
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

K4S56供应商更多...

更新时间：2025-12-25 16:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	K4S560832A-TC75	SAMSUNG	24+	TSOP54	6980	原装现货,可开13%税票	询价
深圳市华斯顿科技有限公司	K4S560832C-TB1H	SAMSUNG	25+23+	TSSOP	37092	绝对原装正品全新进口深圳现货	询价
标准国际(香港)有限公司	K4S560832A-TC1L	Samsung	25+		35	公司优势库存热卖中!!	询价
深圳市宏世佳电子科技有限公司	K4S560832A-TC1L	SAMSUNG	2025+	TSOP	5378	全新原厂原装产品、公司现货销售	询价
齐创科技(上海,北京,青岛)有限公司	K4S560832C	SAM	23+	SOP	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	K4S560832A-TC1L	SAM	24+	TSOP54	60		询价
深圳市卓越微芯电子有限公司	K4S560832B-TC75	SAMSUNG	25+	TSOP	16	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市纳艾斯科技有限公司	K4S560832B-TC75	SAMSUNG	24+	TSOP	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳诚思涵科技有限公司	K4S560832C-TB1H	SAMSUNG	16+	BGA	4000	进口原装现货/价格优势!	询价
深圳市胜彬电子有限公司	K4S560832B-TC75	SAMSUNG	22+	TSOP	8000	原装正品支持实单	询价

K4S56芯片相关品牌

K4S56规格书下载地址

K4S56参数引脚图相关

K4S56数据表相关新闻

K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13
K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8
K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16
K4T1G164QG-BCE7 进口原装，主营军工级IC
K4T1G164QG-BCE7 SAMSUNG，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-14
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24
K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

K4S56价格

K4S56产品属性

K4S56供应商更多...

K4S56芯片相关品牌

K4S56规格书下载地址

K4S56参数引脚图相关

K4S56数据表相关新闻

K4E6E304EB-EGCF

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引