| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4P60DB | Power MOSFET 文件：1.07639 Mbytes Page：9 Pages | VBSEMI 微碧半导体 |   | |
Power MOSFET 文件：1.07646 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 | TOSHIBA 东芝 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.43545 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Power MOSFET 文件：1.07807 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
2450+ |
FBGA |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SAMSUNG/三星 |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
SAMSUNG |
24+ |
BGA |
65300 |
一级代理/放心购买! |
|||
SAMSUNG/三星 |
24+ |
FBGA |
20000 |
只做正品原装现货 |
|||
SAMSUNG/三星 |
23+ |
BGA |
2000 |
原装正品假一罚百!可开增票! |
|||
SAMSUNG/三星 |
24+ |
BGA |
60000 |
全新原装现货 |
|||
SAMSUNG/三星 |
24+ |
BGA |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
22+ |
5000 |
只做原装鄙视假货15118075546 |
|||||
SAMSUNG |
23+ |
BGA |
7000 |
||||
SAMSUNG/三星 |
22+ |
BGA |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
K4P60DB规格书下载地址
K4P60DB参数引脚图相关
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K4P60DB数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4T1G164QG-BCE7 进口原装，主营军工级IC
K4T1G164QG-BCE7 SAMSUNG，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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