| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4P60DA | PowerMOSFET 文件：1.07646 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  |   |
PowerMOSFET 文件：1.07639 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
MOSFETsSiliconN-ChannelMOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.4Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=2.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) (4)Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.43545 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | | |
PowerMOSFET 文件：1.07807 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3283 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG/三星 |
24+ |
1546 |
990000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG/三星 |
2450+ |
FBGA |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SAMSUNG |
25+23+ |
BGAPB |
38867 |
绝对原装正品全新进口深圳现货 |
|||
SAMSUNG |
1231/1221/1213 |
150 |
公司优势库存 热卖中! |
||||
SAMSUNG/三星 |
22+ |
BGA |
100000 |
原装正品现货 |
|||
SAMSUNG |
BGA |
6000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAMSUNG/三星 |
24+ |
FBGA |
43200 |
郑重承诺只做原装进口现货 |
|||
SAMSUNG |
23+ |
BGA |
8000 |
只做原装现货 |
|||
SAMSUNG |
23+ |
BGA |
7000 |
K4P60DA芯片相关品牌
K4P60DA规格书下载地址
K4P60DA参数引脚图相关
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K4P60DA数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4T1G164QG-BCE7 进口原装，主营军工级IC
K4T1G164QG-BCE7SAMSUNG，ALTERA（阿尔特拉），ADI亚德诺，军工级IC专业优势渠道
2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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