| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4P60DA | Power MOSFET 文件：1.07646 Mbytes Page：9 Pages | VBSEMI 微碧半导体 |   | |
Power MOSFET 文件：1.07639 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 | TOSHIBA 东芝 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.43545 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Power MOSFET 文件：1.07807 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3283 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG/三星 |
24+ |
1546 |
990000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG/三星 |
24+ |
BGA |
12000 |
原装正品 有挂就有货 |
|||
SAMSUNG |
BGA |
6000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAMSUNG |
25+23+ |
BGAPB |
38867 |
绝对原装正品全新进口深圳现货 |
|||
SAMSUNG |
1231/1221/1213 |
150 |
公司优势库存 热卖中! |
||||
SAMSUNG/三星 |
24+ |
FBGA |
43200 |
郑重承诺只做原装进口现货 |
|||
SAMSUNG |
24+ |
BGA |
65300 |
一级代理/放心购买! |
|||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA/东芝 |
23+ |
SOT-252 |
6000 |
原装正品，支持实单 |
K4P60DA规格书下载地址
K4P60DA参数引脚图相关
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K4P60DA数据表相关新闻
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2025-1-13K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
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K4F6E3S4HM-MGCJ
2022-4-16K4T1G164QG-BCE7 进口原装，主营军工级IC
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2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
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2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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