型号 功能描述 生产厂家 企业 LOGO 操作
K4H560838B

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

256Mb D-die DDR400 SDRAM Specification

文件:168.54 Kbytes Page:18 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

文件:197.9 Kbytes Page:18 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

K4H560838B产品属性

  • 类型

    描述

  • 型号

    K4H560838B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

更新时间:2025-10-4 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
Samsung
7
公司优势库存 热卖中!!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
24+
TSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
23+
TSOP
8000
只做原装现货
SAMSUNG
23+
TSOP
7000
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SAMSUNG
02+
TSOP
14
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
2518+
TSOP
1546
只做原装正品现货或订货假一赔十!

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