型号 功能描述 生产厂家 企业 LOGO 操作

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

文件:197.9 Kbytes Page:18 Pages

Samsung

三星

256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

文件:197.9 Kbytes Page:18 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

文件:244.04 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

文件:214.82 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

DDR SDRAM 256Mb E-die (x4, x8)

文件:214.45 Kbytes Page:24 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件:297.52 Kbytes Page:23 Pages

Samsung

三星

K4H560438E产品属性

  • 类型

    描述

  • 型号

    K4H560438E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Mb E-die DDR SDRAM Specification 60Ball FBGA(x4/x8)

更新时间:2025-12-30 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
3516
原装现货,当天可交货,原型号开票
SAMSUNG/三星
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAM
24+/25+
480
原装正品现货库存价优
SAMSUNG
2025+
TSOP
4365
全新原厂原装产品、公司现货销售
SAMSUNG/三星
22+
TSOP
12245
现货,原厂原装假一罚十!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG/三星
25+
NA
880000
明嘉莱只做原装正品现货
SAMSUN
25+
TSOP
383
百分百原装正品 真实公司现货库存 本公司只做原装 可
SAMSUNG
16+
QFP
4000
进口原装现货/价格优势!

K4H560438E数据表相关新闻