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型号	功能描述	生产厂家企业	LOGO
K4H560438	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438A-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438B-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438C-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438D-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438E-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438H	DDR SDRAM Product Guide Consumer Memory	Samsung 三星	Samsung
K4H560438J	Consumer Memory SDRAM Product Guide Memory Division November 2007	Samsung 三星	Samsung
K4H560438J	DDR SDRAM Product Guide Consumer Memory	Samsung 三星	Samsung
K4H560438J	256Mb J-die DDR SDRAM Specification Consumer Memory	Samsung 三星	Samsung
K4H560438J-LC/LB0	256Mb J-die DDR SDRAM Specification Consumer Memory	Samsung 三星	Samsung
K4H560438J-LC/LB3	256Mb J-die DDR SDRAM Specification Consumer Memory	Samsung 三星	Samsung
K4H560438J-LCSLASHLB0	256Mb J-die DDR SDRAM Specification Consumer Memory	Samsung 三星	Samsung
K4H560438J-LCSLASHLB3	256Mb J-die DDR SDRAM Specification Consumer Memory	Samsung 三星	Samsung
K4H560438M-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438M-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438M-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438M-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438M-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438M-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H560438N	Consumer Memory SDRAM Product Guide Memory Division November 2007	Samsung 三星	Samsung
K4H560438D-GC	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GC	DDR 256Mb	Samsung 三星	Samsung
K4H560438D-GCA2	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GCB0	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GCB3	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GLA2	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GLB0	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-GLB3	DDR 256Mb 文件：291.04 Kbytes Page：26 Pages	Samsung 三星	Samsung
K4H560438D-NC	256Mb sTSOPII 文件：91.5 Kbytes Page：18 Pages	Samsung 三星	Samsung
K4H560438D-NC	256Mb sTSOPII	Samsung 三星	Samsung
K4H560438D-NC/LA0	256Mb sTSOPII 文件：91.5 Kbytes Page：18 Pages	Samsung 三星	Samsung
K4H560438D-NC/LA2	256Mb sTSOPII 文件：91.5 Kbytes Page：18 Pages	Samsung 三星	Samsung
K4H560438D-NC/LB0	256Mb sTSOPII 文件：91.5 Kbytes Page：18 Pages	Samsung 三星	Samsung
K4H560438D-NC/LB3	256Mb sTSOPII 文件：91.5 Kbytes Page：18 Pages	Samsung 三星	Samsung

K4H560438产品属性

类型
描述
型号
K4H560438
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
128Mb DDR SDRAM

K4H560438供应商更多...

更新时间：2025-10-6 9:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	K4H560438E-GCC	SAMSUNG	09+	BGA	5500	原装无铅,优势热卖	询价
瀚佳科技(深圳)有限公司	K4H560438B-TCA0	SAMSUMG	24+	TSOP	35200	一级代理分销/放心采购	询价
深圳市能创芯电子科技有限公司	K4H560438D-TCBO	TSSOP	23+	16	3500		询价
深圳市鼎欣微电子有限公司	K4H560438E-ZCB3	SAMSUNG/三星	24+	60FBGA	20000	只做正品原装现货	询价
深圳市亿智腾科技有限公司	K4H560438D-TCBO	SAMSUNG/三星	24+	2	3580	原装现货/15年行业经验欢迎询价	询价
天津市博通航睿技术有限公司	K4H560438E-TCB0	SAMSUNG	23+	TSOP	7000		询价
深圳市诚利顺电子科技有限公司	K4H560438D-TCBO	TSSOP	22+	ADI/亚德诺	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
京海半导体(深圳)有限公司	K4H560438E-TCB0	SAMSUNG/三星	21+	TSOP	10000	原装现货假一罚十	询价
深圳市胜彬电子有限公司	K4H560438E-TCB0	SAMSUNG	22+	TSOP	8000	原装正品支持实单	询价
深圳诚思涵科技有限公司	K4H560438E-GCB3	SAMSUNG	16+	QFP	4000	进口原装现货/价格优势!	询价

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K4H560438产品属性

K4H560438供应商更多...

K4H560438芯片相关品牌

K4H560438规格书下载地址

K4H560438参数引脚图相关

K4H560438数据表相关新闻

K4E6E304EB-EGCF

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引