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型号	功能描述	生产厂家企业	LOGO
K4G323222M	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222A	512K x 32Bit x 2 Banks Synchronous Graphic RAM Data Sheet	Samsung 三星	Samsung
K4G323222A	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PC/L45	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PC/L50	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PC/L60	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PC/L70	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PC/L7C	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PCSLASHL45	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PCSLASHL50	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PCSLASHL60	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PCSLASHL70	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-PCSLASHL7C	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QC/L45	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QC/L50	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QC/L60	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QC/L70	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QC/L7C	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QCSLASHL45	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QCSLASHL50	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QCSLASHL60	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QCSLASHL70	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung
K4G323222A-QCSLASHL7C	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung

K4G323222产品属性

类型
描述
型号
K4G323222
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
32Mbit SGRAM

K4G323222供应商更多...

更新时间：2026-1-2 8:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市羿芯诚电子有限公司	K4G323222M-PC60	SAMSUNG	24+	QFP	3000	全新原装现货优势库存	询价
深圳市安罗世纪电子有限公司	K4G323222M-PC60	SAMSUNG	2023+	SMD	969	安罗世纪电子只做原装正品货	询价
京海半导体(深圳)有限公司	K4G323222M-QC70	SAM	21+	TQFP100	10000	原装现货假一罚十	询价
深圳市欧立现代科技有限公司	K4G323222M-PC60	SAMSUNG	24+	QFP	6980	原装现货,可开13%税票	询价
深圳市诺美思科技有限公司	K4G323222M-QC60	SAMSUNG/三星		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市凌旭科技有限公司	K4G323222M-PC60	SAMSUNG	2016+	QFP	2600	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳诚思涵科技有限公司	K4G323222M-QC70	SAMSUNG	16+	TQFP	2500	进口原装现货/价格优势!	询价
深圳市卓越微芯电子有限公司	K4G323222M-QC60	SAMSUNG	25+	QFP100	1020	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市晨豪科技有限公司	K4G323222M-PC60	SAMSUNG/三星	23+	QFP	89630	当天发货全新原装现货	询价
深圳市华来深电子有限公司	K4G323222M-QC70	SAMSUNG	23+	QFP	8560	受权代理!全新原装现货特价热卖!	询价

K4G323222芯片相关品牌

K4G323222规格书下载地址

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K4G323222数据表相关新闻

K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13
K4FBE3D4HB-KFC
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K4F6E3S4HM-MGCJ
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K4T1G164QG-BCE7 SAMSUNG，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-14
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
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DdatasheetPDF页码索引

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K4G323222产品属性

K4G323222供应商更多...

K4G323222芯片相关品牌

K4G323222规格书下载地址

K4G323222参数引脚图相关

K4G323222数据表相关新闻

K4E6E304EB-EGCF

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引