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型号	功能描述	生产厂家&企业	LOGO
K4G323222M	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PC/L80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-PCSLASHL80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QC/L80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL45	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL50	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL55	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL60	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL70	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222M-QCSLASHL80	512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of	Samsung 三星	Samsung
K4G323222A	32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages	Samsung 三星	Samsung

K4G323222M供应商更多...

更新时间：2025-8-14 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	K4G323222M-QC70	SAMSUNG/三星	24+	NA/	3480	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	K4G323222M-PC60	SAMSUNG	2016+	QFP	2600	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	K4G323222M-PC60	SAMSUNG	23+	QFP	20000	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	K4G323222M-QC70	SAMSUNG/三星	24+	NA	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
京海半导体(深圳)有限公司	K4G323222M-QC70	SAM	21+	TQFP100	10000	原装现货假一罚十	询价
深圳市威雅利发展有限公司	K4G323222M-QC60	SAMSUNG	00+	QFP100	1020	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市益百分电子有限公司	K4G323222M-PC60	SEC	00+	QFP100	1570	全新原装进口自己库存优势	询价
深圳市科恒伟业电子有限公司	K4G323222M-QC60	SAMSUNG/三星	1844+	QFP100	6528	只做原装正品假一赔十为客户做到零风险!!	询价
上海专毅电子科技有限公司	K4G323222M-PC60	SAMSUNG	17+	QFP	12000	只做全新进口原装,现货库存	询价
上海鑫科润电子科技有限公司	K4G323222M-PC60	SAM	01+	QFP100	36	原装现货海量库存欢迎咨询	询价

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DdatasheetPDF页码索引

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K4G323222M供应商更多...

K4G323222M芯片相关品牌

K4G323222M规格书下载地址

K4G323222M参数引脚图相关

K4G323222M数据表相关新闻

K4E6E304EB-EGCF

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引