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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4G323222M | 512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 |   | |
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
512K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of | Samsung 三星 | | ||
32Mbit SGRAM 文件：1.12905 Mbytes Page：49 Pages | Samsung 三星 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3480 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG |
2016+ |
QFP |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
23+ |
QFP |
20000 |
全新原装假一赔十 |
|||
SAMSUNG/三星 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
20+ |
QFP-100 |
500 |
样品可出,优势库存欢迎实单 |
|||
QFP |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SAMSUNG |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
Samsung |
12 |
公司优势库存 热卖中!! |
|||||
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
K4G323222M规格书下载地址
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