型号 功能描述 生产厂家 企业 LOGO 操作
K4E661612C-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

更新时间:2026-3-3 10:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
0037
DRAM/4MX16EDO/1BANK;8KRE
4000
原装香港现货真实库存。低价
SAMSUNG
24+
TSOP
8000
SAMSUNG
25+23+
TSOP
35193
绝对原装正品全新进口深圳现货
TSOP-II
25+
SOP16
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TSOP-II
16+
SOP16
4000
进口原装现货/价格优势!
SAMSUNG/三星
0028+
TSOP
372
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
23+
TSOP
50000
全新原装正品现货,支持订货
SAMSUNG
TSOP50
0070+
1156
全新原装进口自己库存优势
SAMSUNG
17+
TSOP50
9988
只做原装进口,自己库存
SAMSUNG
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货

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