位置:首页 > IC中文资料 > K4E661612C-TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4E661612C-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
0037 |
DRAM/4MX16EDO/1BANK;8KRE |
4000 |
原装香港现货真实库存。低价 |
|||
SAMSUNG |
24+ |
TSOP |
8000 |
||||
SAMSUNG |
25+23+ |
TSOP |
35193 |
绝对原装正品全新进口深圳现货 |
|||
TSOP-II |
25+ |
SOP16 |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TSOP-II |
16+ |
SOP16 |
4000 |
进口原装现货/价格优势! |
|||
SAMSUNG/三星 |
0028+ |
TSOP |
372 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
TSOP50 |
0070+ |
1156 |
全新原装进口自己库存优势 |
|||
SAMSUNG |
17+ |
TSOP50 |
9988 |
只做原装进口,自己库存 |
|||
SAMSUNG |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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DdatasheetPDF页码索引
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