位置：首页 > IC中文资料第6863页 > K4E661612B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4E661612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 |   | |
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | |
K4E661612B产品属性
- 类型
描述
- 型号
K4E661612B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
7000 |
||||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原装现货假一罚十 |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
24+ |
BGA |
20000 |
低价现货抛售(美国 香港 新加坡) |
|||
SAMSUNG |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
TSOP50 |
0070+ |
1156 |
全新原装进口自己库存优势 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
4419 |
原装现货,当天可交货,原型号开票 |
|||
SAM |
NEW |
TSOP |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SAMSUNG |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAM |
06+ |
TSOP |
1000 |
自己公司全新库存绝对有货 |
K4E661612B芯片相关品牌
K4E661612B规格书下载地址
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K4E661612B数据表相关新闻
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DdatasheetPDF页码索引
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