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位置：首页 > IC中文资料第6863页 > K4E661612B

型号 功能描述 生产厂家 企业 LOGO 操作
K4E661612B

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612B-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612B-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612C

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612C-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612C-T

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612C-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E661612B产品属性

  • 类型

    描述

  • 型号

    K4E661612B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B供应商更多...

更新时间：2026-5-20 16:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市诺美思科技有限公司
K4E151611C-TC45
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市赛尔通科技有限公司
K4E151611C
SAMSUNG
23+
65480
询价
深圳市毅创腾电子科技有限公司
K4E151611C-TC45
SAM
SOP
395
正品原装--自家现货-实单可谈
询价
深圳市能元时代电子有限公司
K4E151611C-TC45
SAMSUNG
23+
TSOP44
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市英卓尔科技有限公司
K4E010S12WFP
KAWASAKI
20+
QFP
500
样品可出,优势库存欢迎实单
询价
上海金庆电子技术有限公司
K4E661612B-GL60
SAMSUNG
00+
BGA
1174
全新 发货1-2天
询价
深圳市佳鑫美电子科技有限公司
K4E661612B-GL60
SAMSUNG
25+
BGA
2140
全新原装!现货特价供应
询价
千层芯半导体(深圳)有限公司
K4E151611C-TC45
SAMSUNG
24+
SOP
30617
三星闪存专营品牌店全新原装热卖
询价
深圳市一线半导体有限公司
K4E661612B-GL60
SAMSUNG
24+
BGA
1172
询价
贸泽芯城（深圳）电子科技有限公司
K4E151512D-JC60
SAMSUNG优势
23+
SOJ
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价

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