型号 功能描述 生产厂家 企业 LOGO 操作
K4D26323RA

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

K4D26323RA

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricat

Samsung

三星

K4D26323RA产品属性

  • 类型

    描述

  • 型号

    K4D26323RA

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

更新时间:2025-11-22 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
2450+
BGA
6540
只做原厂原装正品终端客户免费申请样品
K4D26323RA-GC33
25+
982
982
SAMSUNG
22+
BGA
5000
全新原装现货!自家库存!
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
-
24+
3880
SAMSUNG
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAMSUMG
24+
TSOP54
9600
原装现货,优势供应,支持实单!
SAMSUNG
22+
BGA
8000
原装正品支持实单
SANSUNG
BGA
53650
一级代理 原装正品假一罚十价格优势长期供货

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