型号 功能描述 生产厂家&企业 LOGO 操作
K4D26323RA

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

128MbitGDDRSDRAM

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat

SamsungSamsung Group

三星三星半导体

Samsung

K4D26323RA产品属性

  • 类型

    描述

  • 型号

    K4D26323RA

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

更新时间:2024-5-13 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
BGA
52
SAMSUNG
21+
BGA-144
50000
全新原装正品现货,支持订货
SAMSUNG
2023+
BGA
700000
柒号芯城跟原厂的距离只有0.07公分
SAMSUNG/三星
21+
BGA
11600
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG/三星
03+
BGA
35
向鸿原装正品/代理渠道/现货优势
SAMSUNG
23+
BGA
5500
原装无铅,优势热卖
SANSUNG
2016+
BGA
9000
只做原装,假一罚十,公司可开17%增值税发票!
SAMSUNG/三星
21+
BGA144
6688
十年老店,原装正品
SAMSUNG
2017+
BGA
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
K4D26323RA-GC33
982
982

K4D26323RA芯片相关品牌

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