型号 功能描述 生产厂家 企业 LOGO 操作
K4D26323QG

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricat

Samsung

三星

K4D26323QG

128Mbit GDDR SDRAM

Samsung

三星

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricat

Samsung

三星

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricat

Samsung

三星

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricat

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

Samsung

三星

K4D26323QG产品属性

  • 类型

    描述

  • 型号

    K4D26323QG

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mbit GDDR SDRAM

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
5810
原装现货,当天可交货,原型号开票
SAMSUNG
2016+
BGA
9000
只做原装,假一罚十,公司可开17%增值税发票!
SAM
23+
NA
20000
全新原装假一赔十
SAMSUNG
24+
BGA144
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
0631+
FBGA144
1895
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
23+
FBGA144
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAMSUNG
25+23+
BGA
36251
绝对原装正品全新进口深圳现货
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG/三星
2450+
BGA
6540
原装现货或订发货1-2周

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