位置:首页 > IC中文资料第12555页 > K4B1G0446
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1Gb C-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications. | Samsung 三星 | |||
1Gb C-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications. | Samsung 三星 | |||
1Gb C-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications. | Samsung 三星 | |||
1Gb C-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications. | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | Samsung 三星 | |||
DDR3 SDRAM Memory | Samsung 三星 | |||
1Gb F-die DDR3 SDRAM | Samsung 三星 | |||
DDR3 SDRAM Memory 文件:1.38881 Mbytes Page:32 Pages | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM | Samsung 三星 |
K4B1G0446产品属性
- 类型
描述
- 型号
K4B1G0446
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Gb C-die DDR3 SDRAM Specification
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
FBGA |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG/三星 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG |
1923+ |
FBGA |
9865 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SAMSUNG/三星 |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
24+ |
BGA |
20000 |
低价现货抛售(美国 香港 新加坡) |
|||
SAMSUNG/三星 |
24+ |
FBGA |
43200 |
郑重承诺只做原装进口现货 |
|||
SAMSUNG/三星 |
21+ |
FBGA |
10000 |
原装现货假一罚十 |
|||
SAMSUNG/三星 |
10+ |
FBGA |
562 |
只做原装正品 |
|||
专营SAMSUNG |
22+ |
QFP |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
K4B1G0446规格书下载地址
K4B1G0446参数引脚图相关
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K4N37
- K4N36
- K4N35
- K4N33
- K4N32
- K4N31
- K4N30
- K4N29A
- K4N29
- K4N28
- K4N27
- K4N26
- K4N25H
- K4N25G
- K4N25A
- K4N25
- K4MDW62
- K4-LFCN
- K4H-BLD
- K4-GALI
- K4B1G0846D-HCF7
- K4B1G0846D
- K4B1G0846C-ZCG9
- K4B1G0846C-ZCF7
- K4B1G0846C-CF8
- K4B1G0446G-BCMA
- K4B1G0446G-BCK0
- K4B1G0446G-BCH9
- K4B1G0446G-BCF8
- K4B1G0446G
- K4B1G0446F
- K4B1G0446E
- K4B1G0446D-HCH9
- K4B1G0446D-HCF8
- K4B1G0446D-HCF7
- K4B1G0446D
- K4B1G0446C-ZCG9
- K4B1G0446C-ZCF7
- K4B1G0446C-CF8
- K4B1G0446C
- K4AAATEADA
- K4AAASCABM
- K4AAAPEABA
- K4AAAPACEH
- K4AAANEABN
- K4AAANEABA
- K4AAANBABA
- K4AAACCABA
- K4AAACBABA
- K4AAAAAAAA
- K4A60DA
- K4A31U4N
- K4A
- K-4985
- K-4970
- K4970
- K-4959
- K4-95
- K-495
- K-4942
- K-494
- K-4931
- K-493
- K4917WHI
- K-474
- K-473
- K-472
- K-471
- K-470
- K4500
- K4212
- K41B0J
- K4145
- K4108
- K4107
- K4101
- K4100
K4B1G0446数据表相关新闻
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
2025-7-10K4A8G165WB-BCRC
K4A8G165WB-BCRC
2020-4-17K4A4G165WE-BCTD
K4A4G165WE-BCTD
2020-4-16K4B1G0846I-BYNB
K4B1G0846I-BYNB
2019-11-22K4B1G0846S-HQH9
K4B1G0846S-HQH9
2019-11-22K4B1G0846I-BYK0000
K4B1G0846I-BYK0000
2019-11-22
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107