型号 功能描述 生产厂家 企业 LOGO 操作

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

Samsung

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

Samsung

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

Samsung

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

Samsung

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

Samsung

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

Samsung

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

Samsung

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

Samsung

三星

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

Samsung

三星

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

DDR3 SDRAM Memory

Samsung

三星

1Gb F-die DDR3 SDRAM

Samsung

三星

DDR3 SDRAM Memory

文件:1.38881 Mbytes Page:32 Pages

Samsung

三星

1Gb G-die DDR3 SDRAM

Samsung

三星

K4B1G0446产品属性

  • 类型

    描述

  • 型号

    K4B1G0446

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Gb C-die DDR3 SDRAM Specification

更新时间:2026-1-2 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
FBGA
9600
原装现货,优势供应,支持实单!
SAMSUNG/三星
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUNG
1923+
FBGA
9865
原装进口现货库存专业工厂研究所配单供货
SAMSUNG/三星
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SAMSUNG/三星
23+
FBGA
50000
全新原装正品现货,支持订货
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
SAMSUNG/三星
24+
FBGA
43200
郑重承诺只做原装进口现货
SAMSUNG/三星
21+
FBGA
10000
原装现货假一罚十
SAMSUNG/三星
10+
FBGA
562
只做原装正品
专营SAMSUNG
22+
QFP
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

K4B1G0446数据表相关新闻