位置:首页 > IC中文资料第11121页 > K4B1G0446G-BC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4B1G0446G-BC | PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | Samsung 三星 | ||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 | |||
1Gb C-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications. | Samsung 三星 | |||
1Gb D-die DDR3 SDRAM Specification The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 | |||
DDR3 SDRAM Memory DDR3 SDRAM Specification DDR3 SDRAM Memory | Samsung 三星 | |||
1Gb G-die DDR3 SDRAM 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for | Samsung 三星 |
K4B1G0446G-BC产品属性
- 类型
描述
- 型号
K4B1G0446G-BC
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Gb G-die DDR3 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
FBGA-82 |
8000 |
原装正品支持实单 |
|||
Samsung |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG/三星 |
2425+ |
BGA |
18800 |
只做原装正品,每一片都来自原厂 |
|||
SAMSUNG |
23+24 |
BGA |
29650 |
原装正品优势渠道价格合理.可开13%增值税发票 |
|||
SAMSUNG |
24+ |
BGA |
20 |
||||
SAMSUNG |
24+ |
FBGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SAMSUNG/三星 |
24+ |
BGA |
20000 |
不忘初芯-只做原装正品 |
|||
SAMSUNG |
17+ |
FBGA |
5188 |
||||
FBGA |
22+ |
QFP |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
SAMSUNG/三星 |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
K4B1G0446G-BC规格书下载地址
K4B1G0446G-BC参数引脚图相关
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DdatasheetPDF页码索引
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