型号 功能描述 生产厂家 企业 LOGO 操作
K4B1G0446G-BC

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

Samsung

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

Samsung

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DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

Samsung

三星

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

Samsung

三星

1Gb G-die DDR3 SDRAM

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for

Samsung

三星

K4B1G0446G-BC产品属性

  • 类型

    描述

  • 型号

    K4B1G0446G-BC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Gb G-die DDR3 SDRAM

更新时间:2025-11-20 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
22+
FBGA-82
8000
原装正品支持实单
Samsung
23+
BGA
8560
受权代理!全新原装现货特价热卖!
SAMSUNG/三星
2425+
BGA
18800
只做原装正品,每一片都来自原厂
SAMSUNG
23+24
BGA
29650
原装正品优势渠道价格合理.可开13%增值税发票
SAMSUNG
24+
BGA
20
SAMSUNG
24+
FBGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
24+
BGA
20000
不忘初芯-只做原装正品
SAMSUNG
17+
FBGA
5188
FBGA
22+
QFP
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
SAMSUNG/三星
22+
BGA
12245
现货,原厂原装假一罚十!

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