TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Features • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

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