丝印代码：K4101；General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.

N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications Low drain−source ON resistance : RDS (ON)= 0. 21Ω(typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

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MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

THINKISEMI 15A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Switching Regulator Applications

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THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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