N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications Low drain−source ON resistance : RDS (ON)= 0. 21Ω(typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

文件：83.74 Kbytes Page：2 Pages

THINKISEMI 15A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

文件：1.00438 Mbytes Page：6 Pages

Switching Regulator Applications

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THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Sensori wireless di temperatura/umidità Wireless temperature/ humidity sensors

文件：806.11 Kbytes Page：8 Pages

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Heavy-Duty Hydra-Lift Karriers

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Celeron M Processor on 65 nm Process

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Detectable Buried Barricade Tapes 400 Series

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