TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

PLL Frequency Synthesizer

GENERAL DESCRIPTION The ADF4106 frequency synthesizer can be used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low noise, digital phase frequency detector (PFD), a precision charge pump, a programmable re

PLL Frequency Synthesizer

GENERAL DESCRIPTION The ADF4106 frequency synthesizer can be used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low noise, digital phase frequency detector (PFD), a precision charge pump, a programmable re

PLL Frequency Synthesizer

GENERAL DESCRIPTION The ADF4106 frequency synthesizer can be used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low noise, digital phase frequency detector (PFD), a precision charge pump, a programmable re

PLL Frequency Synthesizer

GENERAL DESCRIPTION The ADF4106 frequency synthesizer can be used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low noise, digital phase frequency detector (PFD), a precision charge pump, a programmable re

PLL Frequency Synthesizer

文件：361.29 Kbytes Page：24 Pages