型号 功能描述 生产厂家 企业 LOGO 操作
K40T120

IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件:516.59 Kbytes Page:16 Pages

Infineon

英飞凌

IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

文件:598.14 Kbytes Page:15 Pages

Infineon

英飞凌

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon

英飞凌

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

ONSEMI

安森美半导体

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

ONSEMI

安森美半导体

1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency

AITSEMI

创瑞科技

更新时间:2025-12-26 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
2511
标准封装
7000
电子元器件采购降本30%!原厂直采,砍掉中间差价
Infineon(英飞凌)
24+
标准封装
10048
原厂渠道供应,大量现货,原型号开票。
Infineon(英飞凌)
24+
NA/
8735
原厂直销,现货供应,账期支持!
INFINEO
24+
TO247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
23+
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON
25+23+
TO-247
37215
绝对原装正品全新进口深圳现货
ADI
23+
TO247
8000
只做原装现货
INFINEON/英飞凌
23+
TO-3P
50000
全新原装正品现货,支持订货
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
23+
TO-247
5800
绝对全新原装!优势供货渠道!特价!请放心订购!

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