| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K40T120 | IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件:516.59 Kbytes Page:16 Pages | Infineon 英飞凌 | ||
IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode 文件:598.14 Kbytes Page:15 Pages | Infineon 英飞凌 | |||
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode | Infineon 英飞凌 | |||
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features | ONSEMI 安森美半导体 | |||
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features | ONSEMI 安森美半导体 | |||
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features Extremel | ONSEMI 安森美半导体 | |||
IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features Extremely Efficient Trench | ONSEMI 安森美半导体 | |||
1200V, 40A, Irrm=12.3A IGBT MOSFET DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency | AITSEMI 创瑞科技 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
10048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEO |
24+ |
TO247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
TO-247 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON |
25+23+ |
TO-247 |
37215 |
绝对原装正品全新进口深圳现货 |
|||
ADI |
23+ |
TO247 |
8000 |
只做原装现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
23+ |
TO-247 |
5800 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
K40T120芯片相关品牌
K40T120规格书下载地址
K40T120参数引脚图相关
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K40T120数据表相关新闻
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2020-4-17K4A4G085WE-BCRC
K4A4G085WE-BCRC
2020-4-16
DdatasheetPDF页码索引
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