Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES The A3209Ex and A3210Ex integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordles

200 V - 1,000 V Three Phase Bridge

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WASHERS

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Heyco® Original Series-35 Liquid Tight Cordgrips

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