| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K2930 | Silicon N Channel MOS FET High Speed Power Switching / K2930 • Low on-resistance\n RDS=0.020 Ωtyp.\n• High speed switching\n• 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 |   | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V | NTE | | ||
3-Terminal Positive Regulator 文件：251.83 Kbytes Page：8 Pages | NSC 国半 | | ||
LOW DROP OUT VOLTAGE REGULATOR 文件：269.71 Kbytes Page：7 Pages | NJRC 日本无线 | | ||
LOW DROP OUT VOLTAGE REGULATOR 文件：269.71 Kbytes Page：7 Pages | NJRC 日本无线 | | ||
LOW DROP OUT VOLTAGE REGULATOR 文件：269.71 Kbytes Page：7 Pages | NJRC 日本无线 | |
K2930芯片相关品牌
K2930规格书下载地址
K2930参数引脚图相关
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- K2698B
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K2930数据表相关新闻
K32L2B31VMP0A
K32L2B31VMP0A
2021-6-10K3RG2G20BM-AGCH
K3RG2G20BM-AGCH SAMSUNG/三星 2020 BGA KBY00N00HA-B448 TI/德州仪器 KBY00N00HA-A448 TI/德州仪器 2020 KAV00Q013M-A447 ALLWINNER/全志 16+ BGA441 APQ8055 QUALCOMM/高通 2020 BGA K4EBE304EB-EGCF RICHTEK/立锜 2018+ QFN K4EBE324EB-EGCG RICHTEK/立锜 2018+ QFN RC2512FK-073RL RICHTEK/立锜 2020 QFN PM
2021-5-26K3RG2G20BM-AGCH
K3RG2G20BM-AGCH SAMSUNG/三星 2020 BGA KBY00N00HA-B448 TI/德州仪器 KBY00N00HA-A448 TI/德州仪器 2020 KAV00Q013M-A447 ALLWINNER/全志 16+ BGA441 APQ8055 QUALCOMM/高通 2020 BGA K4EBE304EB-EGCF RICHTEK/立锜 2018+ QFN K4EBE324EB-EGCG RICHTEK/立锜 2018+ QFN RC2512FK-073RL RICHTEK/立锜 2020 QFN PM
2021-5-26K24C02
K24C02,当天发货0755-82732291全新原装现货或门市自取.
2020-10-4K24C02C-SIRGA
K24C02C-SIRGA，当天发货0755-82732291全新原装现货或门市自取.
2020-10-2K2698
K2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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