Switching (500V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

Switching (500V, 2A)

1) Low on-resistance.\n2) Fast switching speed.\n3) Wide SOA (safe operating area).\n4) Gate-source voltage (VGSS) guaranteed to be ±30V.\n5) Easily designed drive circuits.\n6) Easy to use in parallel.;

10V Drive Nch MOS FET

1) Low on-resistance.\n2) Fast switching speed.\n3) Wide SOA (safe operating area).\n4) Gate-source voltage (VGSS) guaranteed to be ±30V.\n5) Drive circuit can be simple.\n6) Parallel use is easy.Application\n   Switching;

丝印代码：B1*；FM RADIO AMP, MIX, CONV, OSC, IF AMP

FM RADIO AMP, MIX, CONV, OSC, IF AMP

NPN (FM RADIO AMP, MIX, CONV OSC, IF AMP)

FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain Gpe = 30dB

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

Complementary Switch FET Drivers

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