FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)

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DC−DC Converter, Relay Drive and Motor Drive

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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

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DC?묭C Converter, Relay Drive and Motor Drive Applications

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SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti