SWITCHING N-CHANNEL POWER MOS FET

NEC - RenesasDESCRIPTION\nThe 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n• Low On-Resistance\n2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)\n2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)\n• Low Ciss Ciss = 3600 pF TYP.\ • Low On-Resistance\n2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)\n2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)\n• Low Ciss Ciss = 3600 pF TYP.\n• High Avalanche Capability Ratings;

MOSFET P-Ch, Enhancement Mode High Speed Switch

Features: • Dynamic dv/dt Rating • Repetitive Avalanche Rated • P–Channel • Fast Switching • Ease of Paralleling • Simple Drive Requirements

3V LOW NOISE AMPLIFIER

Product Description The RF2371 is a general purpose, low-cost, high performance low noise amplifier designed for operation from a 2.7V to 4V supply with low current consumption. The attenuation of the device is controlled when in power down mode, providing a known gain step. The RF2371 is availab

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：217.36 Kbytes Page：16 Pages

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：217.36 Kbytes Page：16 Pages

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：217.36 Kbytes Page：16 Pages