SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.\n\nFEATURES\n• Low On-Resistance\n2SK2361: RDS (on)= 0.9 Ω(VGS= 10 V, ID= 5.0 A)\n2SK2362: RDS (on)= 1.0 Ω(VGS= 10 V, ID= 5.0 A)\n• Low CissCiss= 1050 pF TYP.\n• High Avalanche Capability R • Low On-Resistance\n• Low CissCiss= 1050 pF TYP.\n• High Avalanche Capability Ratings;

CURRET MODE FLYBACK PWM SWITCHING REGULATOR

■ GENERAL DESCRIPTION NJM2362 is the current mode flyback type, switching supply voltage IC. Totempole type output, which can drive MOSFET in high speed operation directly. As to the functional protection, internalizing UVLO that can prevent from miss motion at low input voltage operation, p

CURRET MODE FLYBACK PWM SWITCHING REGULATOR

■ GENERAL DESCRIPTION NJM2362 is the current mode flyback type, switching supply voltage IC. Totempole type output, which can drive MOSFET in high speed operation directly. As to the functional protection, internalizing UVLO that can prevent from miss motion at low input voltage operation, p

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages