Ultrahigh-Speed Switching Applications

Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.

High-Voltage High-Speed Switching Applications

· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Converters. • Micaless package facilitating mounting.

boxes and ancillary products

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boxes and ancillary products

文件：3.51246 Mbytes Page：5 Pages

T O TA L L A M P S O LU T I O N S

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包装：零售封装 描述：KLEIN-KURVE DUAL NM CABLE STRIP 工具 剥线钳和配件

包装：散装 描述：CANADIAN NMD90 CABLE STRIPPERS/C 工具 剥线钳和配件

SOLID STATE HIGH POWER AMPLIFIER MODULES

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SOLID STATE HIGH POWER AMPLIFIER MODULES

文件：906.48 Kbytes Page：2 Pages

SOLID STATE HIGH POWER AMPLIFIER MODULES

文件：906.48 Kbytes Page：2 Pages

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP