SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA) Applications •SwitchingVoltageRegulators

INNERINSULATEDTYPETRIAC(IITO-220PACKAGE)

GeneralDescription TheTriacHBTA8A60issuitableforACswitchingapplication,phasecontrolapplicationsuchasheatercontrol,motorcontrol,lightingcontrol,andstaticswitchingrelay. Features *RepetitivePeakOff-StateVoltage:600V *R.M.SOn-stateCurrent(IT(RMS)=12A) *HighCommu

12.0AmpereCommonAnodeFastRecoveryRectifierDiodes

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12AmpTriacFTC16A60Non-InsulatedPack

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MECHANICALDIMENSION

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INSULATEDTYPETRIAC(TO-220FPACKAGE)

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