丝印代码：K12A60D；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

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INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)

General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=12A) * High Commu

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Bi-Directional Triode Thyristor

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Bi-Directional Triode Thyristor

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Bi-Directional Triode Thyristor

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