TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications • Switching Voltage Regulators

PLASTIC SILICON RECTIFIERS

FEATURES Low cost Low leakage Low forward voltage drop High current capability Diffused junction Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0

LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers

LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) Operating Temperature: -65°C to 125° FAST RECOVERY Operating Temperature: -65°C to 125°C

Low reverse leakage

FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GENERAL PURPOSE SILICON RECTIFIER

FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GENERAL PURPOSE SILICON RECTIFIER

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