NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

isc Silicon NPN Power Transistor

DESCRIPTION • High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA • Low Saturation Voltage • Good Linearity of hFE APPLICATIONS • Designed for general purpose Class C amplifier applications up to 1 GHz

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C)