中压 N-ch (40V ~ 400V)

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM100N06 series MOSFETs is a new technology, which combines an innovative super junction t

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

OptiMOSTM Power-Transistor

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N-Channel Enhancement Mode Power Mosfet

文件：3.73479 Mbytes Page：7 Pages

N-Channel Enhancement Mode Power MOSFET

文件：433.03 Kbytes Page：6 Pages