型号 功能描述 生产厂家&企业 LOGO 操作
BSZ100N06NS

OptiMOSTM Power-Transistor

文件:697.5 Kbytes Page:9 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM100N06 series MOSFETs is a new technology, which combines an innovative super junction t

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

ADV

爱德微

N-Channel Enhancement Mode Power Mosfet

文件:3.73479 Mbytes Page:7 Pages

FOSTER

福斯特半导体

N-Channel Enhancement Mode Power MOSFET

文件:433.03 Kbytes Page:6 Pages

HMSEMI

华之美半导体

BSZ100N06NS产品属性

  • 类型

    描述

  • 型号

    BSZ100N06NS

  • 制造商

    Infineon Technologies AG

  • 功能描述

    MV POWER MOS - Tape and Reel

更新时间:2025-8-12 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
PG-TSDSON-8
160107
明嘉莱只做原装正品现货
Infineon/英飞凌
18+
TDSON-8
31968
全新原装现货,可出样品,可开增值税发票
INFINE0N
21+
S3O8 (3x3mm style SuperSO8)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
Infineon/英飞凌
25
PG-TSDSON-8
6000
原装正品
INFINEON
两年内
NA
50
实单价格可谈
INFINEON/英飞凌
22+
NA
8435
可订货 请确认
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINEON
100000
代理渠道/只做原装/可含税
HOLTEK
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
Infineon(英飞凌)
24+
NA/
8735
原厂直销,现货供应,账期支持!

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