丝印代码：JCS7N65FB；N-CHANNEL MOSFET

FEATURES Low gate charge Low Crss(typical 16pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS

N-CHANNEL MOSFET

FEATURES Low gate charge Low Crss(typical 16pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS

场效应晶体管/MOSFET-600V-700V系列

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs