场效应晶体管/MOSFET-大于800V系列

N-CHANNEL MOSFET

APPLICATIONS  Switched mode power suppliesy  Electronic ballast FEATURES Low gate charge Low Crss (typical 8.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  Switched mode power suppliesy  Electronic ballast FEATURES Low gate charge Low Crss (typical 8.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  Switched mode power suppliesy  Electronic ballast FEATURES Low gate charge Low Crss (typical 8.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  Switched mode power suppliesy  Electronic ballast FEATURES Low gate charge Low Crss (typical 8.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

N-Channel Power MOSFET

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10A, 800V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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