PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：TRANS PNP 60V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Switching -60V, -0.6A

PNP Silicon Switching -60V, -0.6A

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Switching -60V, -0.6A

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP SILICON PLANAR TRANSISTORS

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