MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 48 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 75 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low inpu

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2500 V Mean forward current 4645 A Surge current 45 kA

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■ Features ● High reverse voltage VR ● Low forward voltage VF ● Fast reverse recovery time trr

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters