POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

Power Transistors

Power Transistors

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

BJTS, SI PNP POWER

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =