丝印代码：J175；P-Channel Switch

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P-Channel Switch

This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-Channel JFET Switch

FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching APPLICATIONS • Analog Switches • Choppers • Commutators

SINGLE P-CHANNEL JFET SWITCH

FEATURES • Direct Replacement For SILICONIX J/SST174 SERIES • LOW ON RESISTANCE rDS(on) ≤ 85Ω • LOW GATE OPERATING CURRENT ID(off) = 10pA

P沟道开关

P沟道开关 该器件设计用于低电平模拟开关、采样保持电路以及斩波器稳定放大器。 采用工艺88设计。

Linear Systems replaces discontinued Siliconix J175

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P-channel silicon field-effect transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：管件 描述：JFET P-CHAN 30V TO92 分立半导体产品 晶体管 - JFET

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：JFET P-CH 30V 0.35W TO92 分立半导体产品 晶体管 - JFET

P-Channel Silicon Junction Field-Effect Transistor

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P-Channel JFETs

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P-Channel JFETs

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P-Channel Switch

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P-Channel Switch

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a single P-Channel JFET switch

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J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

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P-Channel JFETs

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N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: