GenX3™ 600V IGBT w/ Diode (Electrically Isolated Tab)

Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching

Features

• Silicon Chip on Direct-Copper Bond (DCB) Substrate

• Isolated Mounting Surface

Optimized for Low Conduction and

Switching Losses

• 2500V~ Electrical Isolation

• Square RBSOA

• Anti-Parallel Ultra Fast Diode

Advantages

• High Power Density

• Low Gate Drive Requirement

Applications

• Power Inverters

• UPS

• Motor Drives

• SMPS

• PFC Circuits

• Battery Chargers

• Welding Machines

• Lamp Ballasts