位置:IRGSL4B60KPBF > IRGSL4B60KPBF详情

IRGSL4B60KPBF中文资料

厂家型号

IRGSL4B60KPBF

文件大小

366.25Kbytes

页面数量

14

功能描述

INSULATED GATE BIPOLAR TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRGSL4B60KPBF数据手册规格书PDF详情

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

• Lead-Free.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

更新时间:2025-10-9 14:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
8000
专注配单,只做原装进口现货
IR
23+
7000
IR
20+
TO-262
20500
汽车电子原装主营-可开原型号增税票
IR
23+
TO-262
50000
全新原装正品现货,支持订货
IR
21+
TO-262
10000
原装现货假一罚十
IR
24+
NA/
5690
原装现货,当天可交货,原型号开票
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
IR
24+
TO-262
8866
Infineon
24+
NA
3000
进口原装正品优势供应